MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet - Page 50

• Manufacturer Part Number: MT46V16M16P-5B:K
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M16P-5B:K

• Density: 256 Mb
• Maximum Clock Rate: 400 MHz
• Package: 66TSOP
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.6 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.6V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 260mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

ACTIVE (ACT)
Figure 17:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Activating a Specific Row in a Specific Bank
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access, like a read or a write, as shown in Figure 17. The value on the BA0,
BA1 inputs selects the bank, and the address provided on inputs A0–An selects the row.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Commands