MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet - Page 66

• Manufacturer Part Number: MT46V16M16P-5B:K
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M16P-5B:K

• Density: 256 Mb
• Maximum Clock Rate: 400 MHz
• Package: 66TSOP
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.6 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.6V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 260mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 29:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Nonconsecutive READ Bursts
Notes:
Bank,
Bank,
Bank,
Col n
Col n
READ
Col n
READ
READ
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
NOP
NOP
NOP
T2
T2
T2
t
AC,
DO
n
t
T2n
T2n
DQSCK, and
64
DO
n
Bank,
Col b
Bank,
Col b
Bank,
Col b
READ
READ
READ
T3
T3
T3
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
T3n
T3n
T3n
256Mb: x4, x8, x16 DDR SDRAM
T4
T4
T4
NOP
NOP
NOP
Transitioning Data
T4n
T5
T5
T5
NOP
NOP
NOP
©2003 Micron Technology, Inc. All rights reserved.
DO
b
T5n
T5n
Don’t Care
DO
b
Operations
T6
T6
T6
NOP
NOP
NOP
DO
b