MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet - Page 80

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray

MT46V16M16P-5B:K

Manufacturer Part Number
MT46V16M16P-5B:K
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V16M16P-5B:K

Density
256 Mb
Maximum Clock Rate
400 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
260mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
6 589
Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
7 580
Figure 43:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. An interrupted burst of 4 is shown; two data elements are written.
3. One subsequent element of data-in is applied in the programmed order following DI b.
4.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T2 and T2n (nominal case) to register DM.
7. If the burst of 8 is used, DM and DQS are required at T3 and T3n because the READ com-
t
mand will not mask these two data elements.
DI
WTR is referenced from the first positive CK edge after the last data-in pair.
b
NOP
T1
DI
b
DI
b
T1n
NOP
T2
t
WTR
T2n
78
Bank a,
READ
Col n
T3
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
CL = 2
CL = 2
T4
NOP
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
T5
NOP
DO
DO
DO
©2003 Micron Technology, Inc. All rights reserved.
n
n
n
T5n
T6
NOP
Operations
Don’t Care
T6n

Related parts for MT46V16M16P-5B:K