MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet - Page 40

• Manufacturer Part Number: MT46V16M16P-5B:K
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M16P-5B:K

• Density: 256 Mb
• Maximum Clock Rate: 400 MHz
• Package: 66TSOP
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.6 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Organization: 16Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.6V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 260mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 13:
Figure 14:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Full Drive Pull-Down Characteristics
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
38d. The driver pull-up current variation within nominal limits of voltage and temper-
39b. The driver pull-down current variation, within nominal voltage and temperature
38c. The full driver pull-up current variation from MIN to MAX process; temperature
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
39c. The full driver pull-up current variation from MIN to MAX process; temperature
38f. The full ratio variation of the nominal pull-up to pull-down current should be
-100
-120
-140
-160
-180
-200
160
140
120
100
-2 0
-4 0
-6 0
-8 0
80
60
40
20
0
0
0.0
0. 0
and voltage will lie within the outer bounding lines of the V-I curve of Figure 14 on
page 38.
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 14 on page 38.
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
ture and voltage will lie within the outer bounding lines of the V-I curve of
Figure 15 on page 39.
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 15 on page 39.
and voltage will lie within the outer bounding lines of the V-I curve of Figure 16.
0.5
0 . 5
1. 0
1.0
V
DD
V
Q - V
OUT
38
(V)
OUT
(V)
1 . 5
1.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2. 0
2.0
256Mb: x4, x8, x16 DDR SDRAM
2 . 5
2.5
©2003 Micron Technology, Inc. All rights reserved.