MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet - Page 71

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray

MT46V16M16P-5B:K

Manufacturer Part Number
MT46V16M16P-5B:K
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V16M16P-5B:K

Density
256 Mb
Maximum Clock Rate
400 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
260mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

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Quantity
Price
Part Number:
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Quantity:
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Figure 34:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
BA0, BA1
Case 1:
Case 2:
Address
DQS
DQS
CK#
CKE
A10
DM
DQ
DQ
CK
t
t
AC (MIN) and
AC (MAX) and
Bank READ – Without Auto Precharge
t
t
IS
NOP
IS
T0
t
1
Notes:
t
IH
t
IH
DQSCK (MIN)
t
DQSCK (MAX)
t
t
Bank x
IS
IS
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. The PRECHARGE command can only be applied at T5 if
4. Disable auto precharge.
5. “Don’t Care” if A10 is HIGH at T5.
6. DO n (or b) = data-out from column n (or column b); subsequent elements are provided in
7. Refer to Figure 35 on page 70, Figure 36 on page 71, and Figure 37 on page 72 for detailed
Row
Row
ACT
T1
t
t
times.
the programmed order.
DQS and DQ timing.
IH
IH
t
CK
t
t RAS 3
t
RCD
RC
NOP
T2
1
t
CH
t
CL
Bank x
READ
t
4
IS
Col n
T3
2
t
t
IH
LZ (MIN)
CL = 2
69
NOP
T4
t
1
RPRE
t
LZ (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RPRE
One bank
All banks
Bank x
PRE
T5
t
3
DO
t
DQSCK (MIN)
n
DQSCK (MAX)
5
t
256Mb: x4, x8, x16 DDR SDRAM
AC (MIN)
DO
t
n
AC (MAX)
T5n
t
RP
NOP
t
RAS (MIN) is met.
T6
1
Transitioning Data
t
HZ (MAX)
T6n
t
RPST
©2003 Micron Technology, Inc. All rights reserved.
t
RPST
NOP
T7
1
Operations
Bank x
Don’t Care
Row
Row
ACT
T8

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