K4H560838F-UC/LB0 Samsung Semiconductor, K4H560838F-UC/LB0 Datasheet - Page 14
K4H560838F-UC/LB0
Manufacturer Part Number
K4H560838F-UC/LB0
Description
Manufacturer
Samsung Semiconductor
Datasheet
1.K4H560838F-UCLB0.pdf
(23 pages)
Specifications of K4H560838F-UC/LB0
Lead Free Status / Rohs Status
Compliant
DDR SDRAM 256Mb F-die (x8, x16) Pb-Free
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Parameter
Area = 2.4V-ns
VDDQ
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Rev. 1.2 October, 2004
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Specification
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V