5962-8751501JA QP SEMICONDUCTOR, 5962-8751501JA Datasheet - Page 11

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5962-8751501JA

Manufacturer Part Number
5962-8751501JA
Description
Manufacturer
QP SEMICONDUCTOR
Datasheet

Specifications of 5962-8751501JA

Organization
8Kx8
Interface Type
Parallel
In System Programmable
In System/External
Access Time (max)
45ns
Package Type
CDIP
Reprogramming Technique
UV
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Pin Count
24
Mounting
Through Hole
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant

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Part Number:
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DSCC FORM 2234
APR 97
has a wavelength of 2537 angstroms (Å). The integrated dose (i.e., UV intensity x exposure time) for erasure should be a
minimum of 25 Ws/cm
µW/cm
dose the device can be exposed to without damage is 7258 Ws/cm
intensity UV light for long periods may cause permanent damage.
made available upon request.
(original equipment), design applications, and logistics purposes.
prepared specification or drawing.
4.3.2 Groups C and D inspections.
4.4 Erasing procedure. The recommended erasure procedure for the device is exposure to shortwave ultraviolet light which
4.5 Progamming procedure. The progamming procedures shall be as specified by the device manufacturer and shall be
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535, appendix A.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.2 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-
DEFENSE SUPPLY CENTER COLUMBUS
e.
a. End-point electrical parameters shall be as specified in table II herein.
b. Steady-state life test conditions, method 1005 of MIL-STD-883.
c. All devices submitted for testing shall be programmed with a checkerboard pattern or equivalent. After completion of
(1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control
(2) T
(3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
2
power rating. The device should be placed within one inch of the lamp tubes during erasure. The maximum intergrated
all testing, the devices shall be erased and verified.
Subgroup 4 (C
changes which may affect capacitance.
COLUMBUS, OHIO 43218-3990
and shall be made available to the preparing or procuring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005
of MIL-STD-883.
A
MICROCIRCUIT DRAWING
= +125°C, minimum.
* Indicates PDA applies to subgroup 1 and 7.
** See 4.3.1e.
*** See 4.3.1d.
Interim electrical parameters (method 5004)
Final electrical test parameters
Group A test requirements (method 5005)
Groups C and D end-point electrical
parameters (method 5005)
(method 5004)
2
STANDARD
. The erasure time with this dosage is approximately 35 minutes using a ultraviolet lamp with a 12,000
IN
and C
MIL-STD-883 test requirements
OUT
measurements) shall be measured only for the initial test and after process or design
TABLE II. Electrical test requirements. *
2
1*, 2, 3, 7*, 8A, 8B, 9, 10, 11
1, 2, 3, 4**, 7***, (8A, 8B)***, 9, 10, 11
(1 week at 12,000 µW/cm
Subgroups (per method 5005, table I)
SIZE
2, 3, 7, 8A, 8B
A
- - -
REVISION LEVEL
2
B
). Exposure of EPROMS to high
SHEET
5962-87515
11

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