GP1S30 Sharp Electronics, GP1S30 Datasheet

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GP1S30

Manufacturer Part Number
GP1S30
Description
Manufacturer
Sharp Electronics
Type
Transmissiver
Datasheet

Specifications of GP1S30

Number Of Elements
1
Output Device
Phototransistor
Gap Width
0.9mm
Slit Width
0.8mm
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
Compact
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
150000ns
Rise Time
150000ns
Pin Count
5
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GP1S30
Manufacturer:
dream
Quantity:
1 000
Part Number:
GP1S30J0000F
Manufacturer:
DDK
Quantity:
464
GP1S30
1. Compact package
2. PWB mouning type
3. Double-phase phototransistor output type for
4. Detecting pitch : 0.6mm
1. Mouses
2. Cameras
*1 For MAX. 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
detecting of rotation direction and count
Features
Applications
Absolute Maximum Ratings
Output
Input
*1
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector Voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Prameter
Symbol
V
V
V
V
T
T
T
P
V
P
I
CE 1 O
CE 2 O
E 1 CO
E 2 CO
I
P
F
C
tot
opr
stg
sol
R
C
Subminiature Photointerrupter
AA'Section
Slit width of
emitter side
- 40 to + 100
Outline Dimensions
- 25 to + 85
( 0.8 )
Rating
100
260
50
75
35
20
75
6
6
Center of
light path
4
1.45
( Ta = 25˚C )
5
3
B
B'
2.54
Unit
mW
3.8
* Tolerance :± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by
mW
mW
0.9
mA
mA
˚C
˚C
˚C
V
V
V
to those measured from the lead base.
A'
A
5- 0.15
1
2
( C0.3 )
+ 0.2
- 0.1
Internal connection diagram
1 Anode
2 Cathode
1
2
Rest of gate
( C0.6 )
Soldering area
( 2 )
5 - 0.4
1.27
PT2
( Unit : mm )
PT1
3 Emitter2
4 Emitter1
5 Collector
BB'Section
( 1.0 )
4.0
GP1S30
5
4
3
refer
2 - ( 0.37 )
1.27

Related parts for GP1S30

GP1S30 Summary of contents

Page 1

... Ta = 25˚C ) Symbol Rating Unit 100 mW tot ˚C opr 100 ˚C stg T 260 ˚C sol GP1S30 ( Unit : mm ) Internal connection diagram 1 PT1 5 4 PT2 Anode 3 Emitter2 2 Cathode 4 Emitter1 5 Collector BB'Section 4 0.37 ) Rest of gate ( 0 0.4 - 0.1 1.27 1.27 refer Soldering area ...

Page 2

... Fig. 4 Collector Current vs. Forward Current 25˚C 0˚C - 25˚C 2 MIN. TYP 4mA 250 - F = 125 100 Ambient Temperature 120 P tot 100 ˚C ) Ambient temperature 10 25˚C a 8.0 6.0 4.0 2 Forward current I F GP1S30 ( Ta = 25˚C ) MAX. Unit 1 100 nA 1 000 A 0.4 V 150 s s 150 85 100 50 ...

Page 3

... Fig. 8 Collector Dark Current vs 8mA 125 ˚ Test Circuit for Response Time Input Ambient Temperature 600 500 400 300 200 100 - ˚C ) Ambient temperature T a Ambient Temperature - 20V ˚C ) Ambient temperature T a Input Output Output GP1S30 75 85 100 10% 90 ...

Page 4

... Fig.10 Relative Collector Current vs. Shield Distance ( 1 ) 100 Shield distance Please refer to the chapter “Precautions for Use”. Fig.11 Relative Collector Current vs. Shield 4mA Shield Distance ( 2 ) Moving distance 100 Shield 4mA 0.5 1 1.5 Shield distance GP1S30 ...

Page 5

Application Circuits NOTICE The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any ...

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