GP2S22AB Sharp Electronics, GP2S22AB Datasheet - Page 2

• Manufacturer Part Number: GP2S22AB
• Manufacturer: Sharp Electronics
• Type: Reflectiver

Specifications of GP2S22AB

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: SubMiniature Compact
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 100ns
• Rise Time: 100ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

The ranking of collector current shall be classified into
the following 6 ranks.
2 The condition and arrangement of the reflective object are shown in the following drawing.
3 Without reflective object
Fig. 1 Forward Current vs.
Transfer
teristics
Output
charac-
Electro-optical Characteristics
Input
A, B or C
A or B
B or C
Rank
A
B
C
60
50
40
30
20
10
- 25
Ambient Temperature
0
3
2
Forward voltage
Reverse current
Collector dark current
Collector current
Response time
Leak current
0
Ambient temperature T
58 to 125
34 to 71
20 to 42
34 to 125
20 to 71
20 to 125
Parameter
I
C
( A )
25
50
Rise time
Fall time
a
( ˚C )
75
85
100
Symbol
I
I
LEAK
V
CEO
I
I
t
t
R
C
f
F
r
Test Condition and
Arrangement for
Collector Current
I
V
V
V
V
R
V
F
L
R
CE
CE
CE
CE
= 20mA
= 1k , d = 1mm
= 6V
= 20V, I
= 2V, I
= 2V, I
= 2V, I
Fig. 2 Power Dissipation vs.
Conditions
120
100
60
40
20
80
F
C
F
0
= 4mA
Ambient Temperature
F
= 100 A
= 4mA
- 25
= 0
P
P, P
tot
C
0
Ambient temperature T
25
MIN.
20
-
-
-
-
-
-
50
Al evaporation
10
TYP.
d= 1mm-thick glass
1.2
20
20
-
-
-
a
-9
( ˚C )
75
MAX.
85
10
125
100
100
1.4
0.1
10
( Ta = 25˚C )
- 7
100
GP2S22
Unit
V
A
A
A
A
s
s