NE425S01-T1B-A CALIFORNIA EASTERN LABS, NE425S01-T1B-A Datasheet - Page 11

• Manufacturer Part Number: NE425S01-T1B-A
• Manufacturer: CALIFORNIA EASTERN LABS

Specifications of NE425S01-T1B-A

• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 3V
• Drain Current (max): 90mA
• Drain-source Volt (max): 4V
• Operating Temperature (max): 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

RECOMMENDED SOLDERING CONDITIONS
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
(C10535E).
Infrared ray reflow
Partial heating method
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
Note Exposure limit before soldering after dry-pack package is opened.
Soldering process
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
transistor with shottky barrier gate.
Peak package’s surface temperature: 230 ˚C or below,
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limit
Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limit
Note
: None
Soldering conditions
Note
: None
NE425S01
IR30-00
Symbol
9