NE425S01-T1B-A CALIFORNIA EASTERN LABS, NE425S01-T1B-A Datasheet - Page 4

• Manufacturer Part Number: NE425S01-T1B-A
• Manufacturer: CALIFORNIA EASTERN LABS

Specifications of NE425S01-T1B-A

• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 3V
• Drain Current (max): 90mA
• Drain-source Volt (max): 4V
• Operating Temperature (max): 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

ELECTRICAL CHARACTERISTICS (T
TYPICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
250
200
150
100
50
60
40
20
–2.0
0
0
CHARACTERISTIC
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
T
GS
A
- Ambient Temperature - ˚C
- Gate to Source Voltage - V
100
–1.0
150
SYMBOL
V
V
200
I
I
GS(off)
NF
DS
GSO
DSS
g
G
A
m
a
= 25 ˚C)
= 2 V
A
250
= 25 ˚C)
0
MIN.
–0.2
10.5
20
45
TYP.
–0.7
0.60
12.0
0.5
60
60
MAX.
–2.0
0.80
10
90
100
80
60
40
20
24
20
16
12
0
8
4
1
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
UNIT
mA
mS
dB
dB
V
A
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
2
|S
MSG.
- Drain to Source Voltage - V
21S
V
V
V
V
V
f - Frequency - GHz
GS
DS
DS
DS
DS
|
2
= 2 V, I
= 2 V, V
= 2 V, I
= 2V, I
= –3 V
4
TEST CONDITIONS
1.5
D
D
6
D
GS
= 10 mA, f = 12 GHz
= 10 mA
= 100 A
8 10
= 0 V
MAG.
V
I
D
DS
14 20 30
= 10 mA
V
NE425S01
GS
= 2 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
= 0 V
3.0