GP1S036HEZ0F Sharp Electronics, GP1S036HEZ0F Datasheet - Page 2
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GP1S036HEZ0F
Manufacturer Part Number
GP1S036HEZ0F
Description
Manufacturer
Sharp Electronics
Type
Transmissiver
Datasheet
1.GP1S036HEZ0F.pdf
(11 pages)
Specifications of GP1S036HEZ0F
Number Of Elements
1
Output Device
Phototransistor
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
35V
Forward Current
50mA
Package Type
Compact
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
150000ns
Rise Time
150000ns
Pin Count
5
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
■ Internal Connection Diagram
■ Outline Dimensions
Product mass : approx. 0.2g
or
5
4
3
Top View
show GATE Position
∗3.35
4.5
4
0.15
Plating material : SnCu (Cu : TYP. 2%)
1
2
Sharp mark
“S”
3
5
• Unspecifi ed tolerance : ±0.2mm
• The dimensions indicated by ∗ refer
• Burr is not included in the dimensions.
to those measured from the lead base.
Burr's dimensions : 0.15MAX.
PT
PT
2
1
∗1.27
4.6
2
1
∗1.27
0.4
1
2
3
4
5
Date code
Anode
Cathode
Emitter 2
Emitter 1
Collector
(Unit : mm)
2
Sheet No.: D3-A05601EN
GP1S036HEZ