K6R4016V1D-UI10T00 SAMSUNG, K6R4016V1D-UI10T00 Datasheet - Page 10

• Manufacturer Part Number: K6R4016V1D-UI10T00
• Manufacturer: SAMSUNG

K6R4016V1D
FUNCTIONAL DESCRIPTION
* X means Don t Care.
DATA RETENTION CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
DATA RETENTION WAVE FORM
Data Retention Characteristic is for L-ver only.
CS
V
Data Retention Current
Data Retention Set-Up Time
Recovery Time
H
L
L
L
L
CS controlled
CC
for Data Retention
V
3.0V
V
V
CS
GND
CC
IH
DR
WE
X
H
X
H
L
Parameter
OE
X*
H
X
X
L
LB
X
X
H
H
H
L
L
L
L
UB
X
X
H
H
H
L
L
L
L
Symbol
t
t
V
t
I
SDR
RDR
SDR
DR
DR
Output Disable
Not Select
Mode
Read
Write
CS V
V
V
V
V
See Data Retention
Wave form(below)
(T
CC
IN
CC
IN
PRELIMPreliminaryPPPPPPPPPINARY
A
=3.0V, CS V
=2.0V, CS V
V
=0 to 70 C)
V
CC
- 10
CC
CC
- 0.2V or V
- 0.2V
Test Condition
- 0.2V or V
Data Retention Mode
CS V
I/O
CC
CC
High-Z
High-Z
High-Z
High-Z
D
D
1
D
D
OUT
OUT
- 0.2V
- 0.2V
IN
~I/O
CC
IN
IN
IN
0.2V
- 0.2V
0.2V
8
I/O Pin
I/O
High-Z
High-Z
High-Z
High-Z
D
D
9
Min.
D
D
~I/O
2.0
OUT
OUT
0
5
IN
IN
-
-
16
CMOS SRAM
Typ.
t
RDR
-
-
-
-
-
Supply Current
Max.
3.6
2.0
1.4
I
SB
-
-
I
I
I
, I
CC
CC
CC
SB1
Mar. 2004
Rev 4.0
Unit
mA
ms
ns
V