NTE129 NTE Electronics, Inc., NTE129 Datasheet
NTE129
Manufacturer Part Number
NTE129
Description
Transistor; PNP; TO-39; 80 V (Max.); 80 V (Max.); 5 V (Max.); 1 A (Max.); 25
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driver, Switchr
Datasheet
1.NTE129.pdf
(3 pages)
Specifications of NTE129
Complement To
NPN
Current, Collector
1 A
Current, Collector Cutoff
50 nA
Current, Continuous Collector
1 A
Current, Emitter Cutoff
10 μA
Current, Gain
25
Device Dissipation
1.25 W
Frequency
100 to 400 MHz
Gain, Dc Current, Minimum
25
Material Type
Silicon
Package Type
TO-39
Polarity
PNP
Power Dissipation
1.25 W
Primary Type
Si
Resistance, Thermal, Junction To Case
20 °C/W
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
PNP
Transistor Type
PNP
Voltage, Base To Emitter
5 V
Voltage, Breakdown, Collector To Base
80 V
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Breakdown, Emitter To Base
5 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
0.15 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack-
age designed primarily for amplifier and switching applications. These devices features high break-
down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current
range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1/16” from case, 60sec max), T
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE128
NTE129
NTE129 (PNP).
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
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Silicon Complementary Transistors
EBO
CBO
A
C
NTE128 (NPN) & NTE129 (PNP)
CEO
= +25 C), P
= +25 C), P
Audio Output, Video, Driver
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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stg
C
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D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
L
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–65 to +200 C
–65 to +200 C
7.15mW/ C
28.6mW/ C
4.6mW/ C
40mW/ C
16.5 C/W
89.5 C/W
140 C/W
20 C/W
+300 C
1.25W
140V
0.8W
80V
80V
5W
7W
7V
5V
1A
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NTE129 Summary of contents
Page 1
... Lead Temperature (During Soldering, 1/16” from case, 60sec max), T Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP). ...
Page 2
... Emitter Cutoff Current NTE128 NTE129 ON Characteristics (Note 2) DC Current Gain NTE128 NTE129 Collector–Emitter Saturation Voltage NTE128 NTE129 Base–Emitter Saturation Voltage NTE128 NTE129 Base–Emitter ON Voltage (NTE129 Only) Note 2. Pulse Test: Pulse Width = +25 C unless otherwise specified) A Symbol Test Conditions V (BR)CEO I = 30mA ...
Page 3
... NTE128 NTE129 Input Capacitance NTE128 NTE129 Small–Signal Current Gain NTE128 NTE129 Collector–Base Time Constant (NTE128 Only) Noise Figure (NTE128 Only) Switching Characteristics (NTE129 Only) Storage Time Turn–On Time Fall Time = +25 C unless otherwise specified) A Symbol Test Conditions 50mA, V ...