SI7415DN-T1-E3 Siliconix / Vishay, SI7415DN-T1-E3 Datasheet
SI7415DN-T1-E3
Manufacturer Part Number
SI7415DN-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.054Ohm; ID -3.6A; PowerPAK 1212-8; PD 1.5W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI7415DN-T1-E3.pdf
(2 pages)
Specifications of SI7415DN-T1-E3
Channel Type
P
Current, Drain
-3.6 A
Gate Charge, Total
15 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
PowerPAK 1212-8
Polarization
P-Channel
Power Dissipation
1.5 W
Resistance, Drain To Source On
0.054 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
22 ns
Time, Turn-on Delay
12 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Drain To Source
-60 V
Voltage, Forward, Diode
-0.8 V
Voltage, Gate To Source
±20 V
Trenchfet® Power Mosfet
1.8 V Rated
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7415DN-T1-E3
Manufacturer:
TexasInstruments
Quantity:
506
Part Number:
SI7415DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 60
(V)
8
3.30 mm
D
7
D
6
D
Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK 1212-8
0.110 at V
0.065 at V
Bottom View
5
D
R
DS(on)
J
a
= 150 °C)
1
a
GS
GS
S
= - 4.5 V
(Ω)
= - 10 V
2
S
P-Channel 60-V (D-S) MOSFET
3
a
S
3.30 mm
4
G
a
b, c
A
I
= 25 °C, unless otherwise noted
D
- 5.7
- 4.4
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Fast Switching
• Load Switches
• Half-Bridge Motor Drives
• High Voltage Non-Synchronous Buck Converters
Symbol
Symbol
T
Available
R
R
J
V
V
I
P
, T
DM
thJC
I
I
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
- 5.7
- 4.6
- 3.2
10 s
3.8
2.0
1.9
26
65
G
- 55 to 150
P-Channel MOSFET
± 20
- 60
- 30
260
Steady State
Maximum
S
D
- 3.6
- 2.9
- 1.3
1.5
2.4
0.8
33
81
Vishay Siliconix
Si7415DN
°C/W
Unit
Unit
°C
W
V
A
1
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SI7415DN-T1-E3 Summary of contents
Page 1
... Bottom View Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free) Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si7415DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...