NTE172A NTE Electronics, Inc., NTE172A Datasheet
NTE172A
Manufacturer Part Number
NTE172A
Description
Transistor; NPN; 40 V; 40 V; 12 V; 300 mA; 50 mA; 400 mW; 100 nA (Max.); 20000
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Gainr
Datasheet
1.NTE172A.pdf
(2 pages)
Specifications of NTE172A
Capacitance, Input
10.5 pF
Current, Base
50 mA
Current, Collector
300 mA
Current, Collector Cutoff
100 nA
Current, Gain
20000
Current, Input
50 mA
Current, Output
300 mA
Gain, Dc Current, Minimum
20000
Package Type
TO-92
Polarity
NPN
Power Dissipation
400 mW
Primary Type
Si
Temperature, Operating, Maximum
+125 °C
Temperature, Operating, Minimum
-65 °C
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
1.4 V
Voltage, Emitter To Base
12 V
Voltage, Input
12 V
Voltage, Output
40 V
Voltage, Saturation, Collector To Emitter
1.4 V
Description:
The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier
input stages requiring input impedances of several megohms or extremely low level, high gain, low
noise amplifier applications.
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” 1/32” from case for 10sec max.), T
Note 1. Pulse Test: Pulse Width
Electrical Characteristics: (T
Static Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
DC Current Gain
Collector Cutoff Current
Continuous
Pulsed (Note 1)
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Preamp, Medium Speed Switch
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
A
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
Silicon NPN Transistor
(BR)CBO
(BR)CEO
(BR)EBO
A
I
h
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
300 s, Duty Cycle
FE
D
I
I
I
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
J
NTE172A
CE
CE
CB
CB
= 0.1 A, I
= 0.1 A, I
= 10mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 5V, I
= 40V, I
= 40V, I
Test Conditions
C
C
B
E
E
E
E
= 2mA
= 100mA
= 0
= 0
= 0
= 0, T
= 0
2%
A
= +100 C
20000
7000
Min
40
40
12
–
–
Typ
–
–
–
–
–
–
–
L
. . . . . . . .
–65 to +125 C
–65 to +150 C
70000
Max
100
20
–
–
–
–
4mW/ C
400mW
+260 C
300mA
500mA
Unit
nA
50mA
V
V
V
A
40V
40V
12V
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NTE172A Summary of contents
Page 1
... Darlington Preamp, Medium Speed Switch Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Static Characteristics (Cont’d) Emitter Cutoff Current Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Base–Emitter Voltage Dynamic Characteristics Small–Signal Current Gain Current Gain–High Frequency Current Gain–Bandwidth Product Input Impedance Collector–Base Capacitance Emitter Capacitance Noise Voltage B = ...