NTE153 NTE Electronics, Inc., NTE153 Datasheet
NTE153
Manufacturer Part Number
NTE153
Description
Transistor; PNP; Silicon; TO220; 90 V; 90 V; 5 V; 4 A; 3 A; 40 W (Collector)
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE152.pdf
(2 pages)
Specifications of NTE153
Complement To
NPN
Current, Base
3 A
Current, Collector
4 A
Current, Collector Cutoff
20 μA
Current, Continuous Collector
4 A
Current, Emitter
-4 A
Current, Gain
40 to 200
Frequency
8 MHz
Material Type
Silicon
Package Type
TO-220
Polarity
PNP
Power Dissipation
40 W
Primary Type
Si
Temperature Range, Junction, Operating
150 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
90 V
Voltage, Collector To Base
90 V
Voltage, Collector To Emitter
90 V
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V
Description:
The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220
type package designed for general purpose medium power switching and amplifier applications.
Features:
D Good Linearity of h
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Emitter Current, I
Base Current, I
Collector Power Dissipation (T
Junction Temperature, T
Storage Temperature Range, T
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
Electrical Characteristics: (T
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transition Frequency
Collector Output Capacitance
10% of each other.
mentary pairs have their gain specification (h
Parameter
B
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
Silicon Complementary Transistors
EBO
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
NTE152 (NPN) & NTE153 (PNP)
Audio Power Amplifier, Switch
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
Symbol
V
(BR)CEO
h
h
CE(sat)
I
I
V
C
CBO
EBO
FE1
FE2
f
BE
T
ob
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
CB
= 50mA, I
= 3A, I
= 90V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Conditions
FE
) matched to within 10% of each other.
B
C
C
C
= 0.3A
C
C
E
E
B
= 0
= 0.5A
= 3A
= 3A
= 0.5A
= 0
= 0
= 0, f = 1MHz
Min Typ Max Unit
90
40
15
–
–
–
–
3
–
FE
) matched to within
85
–
–
–
–
–
–
–
8
–55 to +150 C
200
1.5
1.5
20
10
–
–
–
–
+150 C
MHz
40W
pF
V
V
V
90V
90V
–4A
A
A
5V
4A
3A
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NTE153 Summary of contents
Page 1
... NTE152 (NPN) & NTE153 (PNP) Silicon Complementary Transistors Description: The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220 type package designed for general purpose medium power switching and amplifier applications. Features: D Good Linearity Absolute Maximum Ratings: (T Collector–Base Voltage, V CBO Collector– ...
Page 2
Dia Max .070 (1.78) Max Base .100 (2.54) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Emitter Collector/Tab ...