NTE2321 NTE Electronics, Inc., NTE2321 Datasheet - Page 2
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NTE2321
Manufacturer Part Number
NTE2321
Description
Transistor; DIP; NPN; 30 V; 60 V; 5 V; 500 mA; 0.65 W; -65 to 200 degC
Manufacturer
NTE Electronics, Inc.
Type
General Purpose, Quadr
Datasheet
1.NTE2321.pdf
(2 pages)
Specifications of NTE2321
Current, Collector
500 mA
Current, Collector Cutoff
50 nA
Current, Continuous Collector
500 mA
Current, Gain
30
Device Dissipation
0.65 W
Frequency
350 MHz
Gain, Dc Current, Minimum
30
Package Type
14-Lead DIP
Polarity
NPN
Power Dissipation
1.9 W
Primary Type
Si
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
60 V (Min.)
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
5 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
30 V
Voltage, Collector To Emitter, Saturation
1.6 V
Voltage, Emitter To Base
5 V
Electrical Characteristics (Cont’d): (T
Switching Characteristics
Turn–On Time
Turn–Off Time
Parameter
14
1
.785 (19.95) Max
.600 (15.24)
.100 (2.45)
Collector
Collector
Emitter
Emitter
Symbol
Base
Base
N.C.
Pin Connection Diagram
t
t
on
off
A
1
2
3
4
5
6
7
= +25 C unless otherwise specified)
8
7
V
I
V
I
C
B1
CC
CC
= 150mA, I
= I
= 30V, V
= 30V, I
B2
= 15mA
Test Conditions
.200 (5.08)
14
13
12
10
11
9
8
C
.099 (2.5) Min
BE(off)
B1
Max
= 150mA,
Collector
Base
Emitter
N.C.
Emitter
Base
Collector
= 15mA
= 0.5V,
.300 (7.62)
Min
–
–
Typ
250
25
Max
–
–
Unit
ns
ns