NTE37 NTE Electronics, Inc., NTE37 Datasheet - Page 2

• Manufacturer Part Number: NTE37
• Description: Transistor; PNP; Silicon; TO3P; 160 V; 140 V; 6 V; 12 A; 100 W; 150 degC; NPN
• Manufacturer: NTE Electronics, Inc.
• Type: AF, Amplifier, High Currentr

Specifications of NTE37

• Complement To: NPN
• Current, Collector: 12 A
• Current, Collector Cutoff: 0.1 mA
• Current, Continuous Collector: 12 A
• Current, Gain: 60 to 200
• Frequency: 15 MHz
• Material Type: Silicon
• Package Type: TO-3P
• Polarity: PNP
• Power Dissipation: 100 W
• Primary Type: Si
• Temperature Range, Junction, Operating: 150 °C
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 140 V
• Voltage, Collector To Base: 160 V
• Voltage, Collector To Emitter: 140 V
• Voltage, Collector To Emitter, Saturation: 1.1 V
• Voltage, Emitter To Base: 6 V
• Voltage, Saturation, Collector To Emitter: 1.1 V

Electrical Characteristics (Cont’d): (T
Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple-
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
Fall Time
Storage Time
NOTE: Either case style may be shipped depending on stock.
.190 (4.82)
NTE36
NTE37
NTE36
NTE37
NTE36
NTE37
(20.0)
.787
mentary pairs have their gain specification (h
Parameter
(15.02)
(20.0)
.591
.787
B
.615 (15.62)
C
V
V
V
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
E
t
t
.215 (5.47)
on
on
t
f
A
I
I
I
I
10I
PW = 20 s
C
C
C
E
= +25 C unless otherwise specified)
(3.22)
= 5mA, I
= 5mA, I
= 5mA, R
= 50mA, R
.126
Dia
B1
= –10I
(Note)
Test Conditions
OR
C
E
BE
B2
= 0
= 0
BE
FE
=
= I
=
.217
(5.5)
) matched to within 10% of each other.
C
= 1A,
B
.670 (17.0)
Max
.130 (3.3)
C
Dia
.215 (5.47)
E
Min
160
140
140
6
–
–
–
–
–
–
.177 (4.5)
0.26
0.25
0.68
0.53
6.88
1.61
Typ
–
–
–
–
(15.0)
(19.0)
.590
.747
.197 (5.0)
.025 (0.65)
Min
(22.0)
.866
Max
–
–
–
–
–
–
–
–
–
–
Unit
V
V
V
V
s
s
s