NTE2398 NTE Electronics, Inc., NTE2398 Datasheet
NTE2398
Manufacturer Part Number
NTE2398
Description
MOSFET; N-Ch; VDSS 500V; RDS(ON) 1.5 Ohms; ID 4.5A; TO-220; PD 74W; VGS +/-20V; Qg 38nC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2398.pdf
(3 pages)
Specifications of NTE2398
Channel Type
N-Channel
Current, Drain
4.5 A
Fall Time
16 ns (Typ.)
Gate Charge, Total
38 nC
Mounting And Package Type
M3 Screw Mounting
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
74 W
Resistance, Drain To Source On
1.5 Ohms
Resistance, Thermal, Junction To Case
1.7 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
62 °C⁄W
Time, Rise
16 ns (Typ.)
Time, Turn-off Delay
42 ns
Time, Turn-on Delay
8.2 ns
Transconductance, Forward
2.5 Mhos
Voltage, Breakdown, Drain To Source
500 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±20 V
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
Pulsed Drain Current (Note 1), I
Power Dissipation (T
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw)
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
T
T
Derate Linearly Above 25 C
C
C
SD
= +25 C
= +100 C
DD
= 50V, starting T
4.5A, di/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25 C), P
75A/ s, V
GS
GS
AR
J
N–Ch, Enhancement Mode
stg
= +25 C, L = 24mH, R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10V), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
AR
V
J
thJC
NTE2398
MOSFET
AS
(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, T
J
G
= 25 , I
+150 C
AS
= 4.5A
L
thCS
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
10 lbfin (1.1Nm)
–55 to +150 C
–55 to +150 C
0.59W/ C
1.7 C/W
0.5 C/W
62 C/W
3.5V/ns
+300 C
280mJ
7.4mJ
4.5A
2.9A
74W
4.5A
18A
20V
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NTE2398 Summary of contents
Page 1
... Thermal Resistance, Junction–to–Ambient, R Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 50V, starting T DD Note 3. I 4.5A, di/dt 75A NTE2398 MOSFET N–Ch, Enhancement Mode High Speed Switch = 10V ...
Page 2
Electrical Characteristics: (T Parameter Drain–to–Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain–to–Source On–Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Gate–to–Source Forward Leakage Gate–to–Source Reverse Leakage Total Gate Charge Gate–to–Source Charge Gate–to–Drain (“Miller”) Charge Turn–On Delay Time Rise ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...