NTE185 NTE Electronics, Inc., NTE185 Datasheet - Page 2

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NTE185

Manufacturer Part Number
NTE185
Description
Transistor; PNP; Silicon; TO126; 80 V; 80 V; 5 V; 4 A; 1 A; 40 W; -65 to 150 de
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet

Specifications of NTE185

Complement To
NPN
Current, Base
1 A
Current, Collector
4 A
Current, Collector Cutoff
0.1 mA
Current, Continuous Collector
4 A
Current, Gain
20 to 80
Frequency
2 MHz
Material Type
Silicon
Package Type
TO-126
Polarity
PNP
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.12 °C/W
Temperature Range, Junction, Operating
-65 to +150 °C
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1.4 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.5 V
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width
Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (h
Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
10% of each other.
NTE185 (PNP).
Parameter
.130 (3.3)
(16.6)
(11.4)
C
.450
Max
.655
Max
Max
= +25 C unless otherwise specified)
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(on)
h
f
FE
T
E
I
I
I
I
I
I
C
C
C
C
C
C
.330 (8.38)
= 1.5A, V
= 4A, V
= 1.5A, I
= 4A, I
= 1.5A, V
= 1A, V
C
Max
B
CE
CE
B
Test Conditions
B
= 1A
.090 (2.28)
CE
CE
= 0.15A
= 2V
= 10V, f = 1MHz
= 2V
= 2V
2%.
.030 (.762) Dia
(4.45)
.175
Max
.118 (3.0)
Dia
Min
FE
2.0
20
7
) matched to within
Typ
Max Unit
0.6
1.4
1.2
80
MHz
V
V
V

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