SI2333DS-T1-E3 Siliconix / Vishay, SI2333DS-T1-E3 Datasheet
SI2333DS-T1-E3
Manufacturer Part Number
SI2333DS-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ohm; ID -4.1A; TO-236 (SOT-23); PD 0.75W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI2333DS-T1-E3.pdf
(2 pages)
Specifications of SI2333DS-T1-E3
Current, Drain
-4.1 A
Gate Charge, Total
11.5 nC
Package Type
TO-236 (SOT-23)
Polarization
P-Channel
Power Dissipation
0.75 W
Resistance, Drain To Source On
0.025 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
72 ns
Time, Turn-on Delay
25 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-12 V
Voltage, Forward, Diode
0.7 V
Voltage, Gate To Source
±8 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2333DS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
127 169
Company:
Part Number:
SI2333DS-T1-E3
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
SI2333DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
DS
-12
(V)
J
0.032 @ V
0.042 @ V
0.059 @ V
a, b
= 150_C)
a
Parameter
Parameter
r
DS(on)
_
a, b
a, b
GS
GS
GS
(W)
= -4.5 V
= -2.5 V
= -1.8 V
P-Channel 12-V (D-S) MOSFET
a, b
A
Steady State
Steady State
T
T
T
T
t v 5 sec
= 25_C UNLESS OTHERWISE NOTED)
A
A
A
A
G
S
= 25_C
= 70_C
= 25_C
= 70_C
New Product
I
D
-5.3
- 4.6
- 3.9
1
2
(A)
Si2333DS (E3)*
*Marking Code
(SOT-23)
Top View
TO-236
Symbol
Symbol
T
R
R
V
V
J
I
P
, T
DM
I
I
thJA
thJF
3
DS
GS
D
S
D
stg
D
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D PA Switch
Typical
5 sec
- 5.3
-4.2
-1.0
1.25
120
0.8
75
40
-55 to 150
-12
-20
$8
Steady State
Vishay Siliconix
Maximum
-4.1
-3.3
-0.6
0.75
0.48
100
166
50
Si2333DS
Unit
Unit
_C/W
C/W
_C
W
V
A
1
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SI2333DS-T1-E3 Summary of contents
Page 1
... Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. New Product I (A) D -5.3 - 4.6 - 3.9 TO-236 (SOT-23 Top View Si2333DS (E3)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C 25_C ...
Page 2
... Si2333DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate-Threshold Voltage V GS(th) Gate-Body Leakage I Zero Gate Voltage Drain Current I a On-State Drain Current I D(on) a Drain-Source On-Resistance r DS(on) a Forward Transconductance Diode Forward Voltage V b Dynamic Total Gate Charge ...