NTE123 NTE Electronics, Inc., NTE123 Datasheet - Page 2

• Manufacturer Part Number: NTE123
• Description: Transistor; TO39; NPN; 40 V; 75 V; 6 V; 800 mA; 800 mW; -65 to 200 degC
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, Switchr

Specifications of NTE123

• Current, Collector: 800 mA
• Current, Collector Cutoff: 10 μA
• Current, Continuous Collector: 800 mA
• Current, Gain: 40
• Device Dissipation: 800 mW
• Frequency: 300 MHz
• Gain, Dc Current, Minimum: 40 @ 500 mA
• Package Type: TO-39
• Polarity: NPN
• Power Dissipation: 800 mW
• Primary Type: Si
• Temperature Range, Junction, Operating: -65 to +200 °C
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Base: 75 V
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Breakdown, Emitter To Base: 6 V
• Voltage, Collector To Base: 75 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
Note 2. f
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small–Signal Current Gain
Output Admittance
Collector–Base Time Constant
Noise Figure
Real Part of Common–Emitter
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Active Region Time Constant
High Frequency Input Impedance
T
is defined as the frequency at which |h
Parameter
Symbol
V
V
Re(h
rb C
CE(sat)
BE(sat)
C
C
h
h
NF
300 s, Duty Cycle
h
h
h
T
f
t
obo
t
FE
t
t
ibo
oe
T
re
q
s
ie
fe
r
f
A
ie
c
)
A
= +25 C unless otherwise specified)
I
I
I
I
I
I
I
I
I
I
I
I
f = 100MHz, Note 2
V
V
I
I
I
I
I
I
I
I
I
I
R
I
V
I
V
I
I
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
C
CB
EB
CC
CC
S
= 20mA, V
= 10mA, V
= 20mA, V
= 0.1mA, V
= 1mA, V
= 10mA, V
= 150mA, V
= 150mA, V
= 500mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 1mA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 100 A, V
= 150mA, I
= 150mA, V
= 1k , f = 1kHz
= I
= 10V, I
= 0.5V, I
= 30V, V
= 30V, I
B2
Test Conditions
fe
= 15mA
| extrapolates to unity.
CE
CE
CE
CE
CE
E
C
CB
C
CE
CE
CE
CE
CE
CE
CE
CE
BE(off)
B
B
B
B
B1
CE
CE
= 0, f = 100kHz
= 150mA,
CE
CE
CE
CE
= 0, f = 100kHz
= 10V
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 15mA
= 50mA
= 15mA
= 50mA
= 20V, f = 31.8MHz
= 20V, f = 300MHz
= 10V, T
= 10V
= 20V,
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 10V, f = 1kHz
= 15mA
= 10V
2%.
= 10V,
= 10V
= 1.0V
= 10V
= 30V
= 0.5V,
A
= –55 C
0.25
Min
100
300
0.6
2.0
5.0
35
50
75
35
50
40
50
75
25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
1.25
300
300
375
200
150
225
0.3
1.0
1.2
2.0
8.0
2.5
25
35
60
10
25
60
–
–
–
–
–
–
–
8
8
4
4
x 10
x 10
MHz
Unit
mhos
mhos
k
k
dB
pF
pF
ps
ns
ns
ns
ns
ns
V
V
V
V
–4
–4