NTE2377 NTE Electronics, Inc., NTE2377 Datasheet

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NTE2377

Manufacturer Part Number
NTE2377
Description
MOSFET; N-Ch; VDSS 900V; RDS(ON) 1.2 Ohms; ID 8A; TO-3P; PD 150W; VGS +/-30V; gFS 5Mhos
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE2377

Application
Switching mode power supplies, uninterruptible power supplies and motor speed control
Channel Type
N-Channel
Current, Drain
8 A
Fall Time
150 nS
Operating And Storage Temperature
-55 to +150 °C
Package Type
TO-3P
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
1.2 Ohms
Temperature, Operating, Maximum
+150 °C
Time, Rise
80 nS
Time, Turn-off Delay
350 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
5 Mhos
Voltage, Breakdown, Drain To Source
900 V
Voltage, Diode Forward
1.8 V (Max.)
Voltage, Forward, Diode
1.8 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Low ON–State Resistance
D Very High–Speed Switching
D Converters
Absolute Maximum Ratings: (T
Drain–Source Voltage, V
Gate–Source Voltage, V
DC Drain Current, I
Pulsed Drain Current (Note 1), I
Allowable Power Dissipation (T
Maximum Channel Temperature, T
Storage Temperature Range, T
Note 1. Pulse Width
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
Electrical Characteristics: (T
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Source Leakage Current
Cutoff Voltage
Static Drain–Source On Resistance
Forward Transconductance
source.
Parameter
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 s, Duty Cycle
GSS
DSS
Enhancement Mode, High Speed
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
C
DP
= +25 C unless otherwise specified)
= +25 C), P
A
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= +25 C unless otherwise specified)
Symbol
V
R
(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
GS(off)
DS(on)
GSS
DSS
g
fs
N–Channel,
NTE2377
MOSFET
1%.
D
I
V
V
V
V
V
D
GS
DS
DS
GS
DS
= 1mA, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0, V
= 10V, I
= 20V, I
= 0, V
= 10V, I
Test Conditions
GS
DS
GS
D
D
D
= Max Rating
= 30V
= 1mA
= 4A
= 4A
= 0
Min
900
2.5
2
Typ
1.2
5.0
–55 to +150 C
Max
1.0
1.6
100
3
+150 C
150W
Unit
mho
900V
mA
nA
V
V
30V
36A
8A

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NTE2377 Summary of contents

Page 1

... Allowable Power Dissipation (T Maximum Channel Temperature, T Storage Temperature Range, T Note 1. Pulse Width 10 s, Duty Cycle Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and source. Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Zero–Gate Voltage Drain Current Gate– ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn–On Time Rise Time Turn–Off Delay Time Fall Time Diode Forward Voltage .190 (4.82) .787 (20.0) = +25 C unless otherwise specified) A Symbol Test Conditions C iss ...

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