NTE198 NTE Electronics, Inc., NTE198 Datasheet - Page 2
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NTE198
Manufacturer Part Number
NTE198
Description
Transistor, NPN; TO-220; NPN; 400 V; 500 V; 5 V; 1 A; 40 W; -65 to 150 degC; 10
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE198.pdf
(2 pages)
Specifications of NTE198
Current, Collector
1 A
Current, Gain
30 to 150
Device Dissipation
40 W
Frequency
10 MHz
Gain, Dc Current, Minimum
10
Package Type
TO-220
Polarity
NPN
Power Dissipation
2 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.125 °C/W
Temperature, Junction, Operating
-65 to 150 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Base
500 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Electrical Characteristics (Cont’d): (T
Note 1. Pulse test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Current Gain–Bandwidth Product
Small–Signal Current Gain
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
.100 (2.54)
Base
Symbol
300 s, Duty Cycle
V
V
CE(sat)
BE(on)
h
h
f
FE
T
fe
C
= +25 C unless otherwise specified)
V
V
I
V
V
V
C
.420 (10.67)
CE
CE
CE
CE
CE
= 1A, I
= 10V, I
Max
= 10V, I
= 10V, I
= 10V, I
= 10V, I
Test Conditions
B
= 0.2A
C
C
C
C
C
2%.
= 0.2A, f = 2MHz
= 0.3A
= 1A
= 1A
= 0.2A, f = 1kHz
.250 (6.35)
Max
Emitter
Collector/Tab
.110 (2.79)
(12.7)
(12.7)
.500
Max
.500
Min
Min
30
10
10
25
–
–
Typ
–
–
–
–
–
–
Max Unit
150
1.0
1.5
–
–
–
MHz
V
V