SUP65P06-20-E3 Siliconix / Vishay, SUP65P06-20-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP65P06-20-E3
• Description: MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.02 Ohm; ID -65A; TO-220AB; PD 250W; VGS +/-20
• Manufacturer: Siliconix / Vishay

Specifications of SUP65P06-20-E3

• Current, Drain: -65 A
• Gate Charge, Total: 85 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 0.02 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 65 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 25 S
• Voltage, Breakdown, Drain To Source: -60 V
• Voltage, Forward, Diode: -1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

SUP/SUB65P06-20
Vishay Siliconix
Notes:
a.
b.
d.
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
a
a
_
Symbol
V
I
V
RM(REC)
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
Q
g
SM
t
oss
t
I
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
rr
g
C
I
V
V
D
D
V
= 25_C)
V
V
GS
DS
DS
GS
V
DS
DS
] –65 A, V
GS
= –30 V, V
= –10 V, I
= –60 V, V
= –60 V, V
= –10 V, I
I
V
V
F
F
V
V
V
V
= 0 V, V
V
V
DD
DD
V
DS
DS
= –65 A, di/dt = 100 A/ms
DS
GS
I
GS
DS
DS
Test Condition
F
= –30 V, R
= –30 V, R
= –65 A, V
b
= V
= –5 V, V
= 0 V, V
= –10 V, I
= 0 V, I
= –60 V, V
= –15 V, I
GEN
GEN
GS
DS
D
GS
GS
D
GS
GS
= –30 A, T
, I
= –30 A, T
= –25 V, f = 1 MHz
= –10 V, I
= –10 V, R
D
GS
D
= 0 V, T
= 0 V, T
GS
= –250 mA
D
GS
= –250 mA
D
L
L
GS
= "20 V
= –30 A
= –10 V
= –30 A
= 0.47 W
= 0.47 W
= 0 V
= 0 V
J
J
J
J
D
D
G
G
= 125_C
= 175_C
= 175_C
= 125_C
m
= –65 A
= 2.5 W
Min
–120
–2.0
–60
25
0.017
0.245
Typ
4500
–3.0
–1.1
870
350
85
24
22
15
40
65
30
70
7
Max
"100
0.020
0.033
0.042
–150
–200
–4.0
–1.4
0.54
–50
120
120
–65
120
–1
40
80
60
9
Unit
nA
mA
m
pF
nC
mC
ns
ns
W
V
A
S
A
V
A