NTE102A NTE Electronics, Inc., NTE102A Datasheet
NTE102A
Manufacturer Part Number
NTE102A
Description
Transistor; Medium Power; PNP; 10 V (Max.); 32 V (Max.); 1 A; 650 mW (Max.)
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE102A.pdf
(2 pages)
Specifications of NTE102A
Amplifier Type
Medium Power
Current, Collector
1 A
Current, Gain
295
Frequency
2.3 MHz
Package Type
TO-1
Polarity
PNP
Power Dissipation
650 mW
Primary Type
Ge
Temperature, Operating, Maximum
90 °C
Transistor Polarity
PNP
Voltage, Collector To Base
32 V
Voltage, Collector To Emitter
10 V
Voltage, Collector To Emitter, Saturation
0.17 V
Voltage, Emitter To Base
10 V
Voltage, Saturation, Collector To Emitter
0.17 V
Description:
The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.
Absolute Maximum Ratings: (T
Collector-Base Voltage, V
Emitter-Base Voltage, V
Collector Current, I
Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Collector-Base Voltage
Collector Cutoff Current
DC Current Gain
Common-Emitter Cutoff Frequency
Collector-Emitter Saturation Voltage
Noise Figure
Parameter
C
Germanium Complementary Transistors
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
NTE102A (PNP) & NTE103A (NPN)
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
Medium Power Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
A
Symbol
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C unless otherwise specified)
V
I
h
h
CE(sat)
CBO
NF
f
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE1
FE2
αe
I
V
V
V
V
I
V
C
C
CB
CB
CB
CB
CB
= 200μA, I
= 500mA, I
= 10V, I
= 0, I
= 0, I
= 2V, I
= 5V, I
Test Conditions
E
E
E
E
= 300mA
= 50mA
E
= 10mA
= 5mA, f = 1kHz
E
B
= 0
= 0
= 50mA
Min
32
63
69
10
-
-
-
0.17
Typ
-
-
-
-
-
-
-55° to +90°C
Max Unit
295
273
25
25
-
-
-
650mW
+90°C
kHz
μA
dB
V
V
32V
10V
1A
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NTE102A Summary of contents
Page 1
... NTE102A (PNP) & NTE103A (NPN) Germanium Complementary Transistors Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (T Collector-Base Voltage, V CBO Emitter-Base Voltage, V EBO Collector Current, I ...
Page 2
Emitter .240 (6.09) Dia Max .410 (10.4) Max .750 (19.1) Min .071 (1.82) Dia Base Collector ...