NTE159M NTE Electronics, Inc., NTE159M Datasheet
NTE159M
Manufacturer Part Number
NTE159M
Description
Transistor; PNP; 60 V; 60 V; 5 V; 600 mA (Continuous); 0.4 W @ TA gt= 25 degC;
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Switchr
Datasheet
1.NTE123A.pdf
(4 pages)
Specifications of NTE159M
Bandwidth, Current Gain
200 MHz (Min.)
Current, Collector
600 mA
Current, Collector Cutoff
50 nA
Current, Gain
50
Frequency
200 MHz
Gain, Dc Current, Maximum
300 @ IC ≥ 150 mA
Gain, Dc Current, Minimum
100 @ IC ≥ 150 mA
Package Type
TO-18
Polarity
PNP
Power Dissipation
0.4 W
Primary Type
Si
Transistor Type
PNP
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
1.6 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
0.4 V @ IC ≥ 500 mA, IB ≥ 15 mA
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis-
tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from
audio to VHF frequencies.
Features:
D Low Collector Saturation Voltage: 1V (Max)
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Temperature Range, T
Storage Temperature Range, T
NTE123A
NTE159M
NTE123A
NTE159M
NTE123A
NTE159M
NTE123A
NTE159M
Derate Above +25 C
NTE123A
NTE159M
Derate Above +25 C
Derate Above +25 C
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Silicon Complementary Transistors
EBO
NTE123A (NPN) & NTE159M (PNP)
CBO
A
C
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= 300MHz (Min) @ I
C
20mA
–65 to +200 C
–65 to +200 C
2.28mW/ C
6.85mW/ C
10.3mW/ C
800mA
600mA
0.4W
1.2W
1.8W
40V
60V
75V
60V
6V
5V
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NTE159M Summary of contents
Page 1
... NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transis- tors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. ...
Page 2
... NTE159M Collector Cutoff Current NTE123A NTE159M Collector Cutoff Current NTE123A NTE159M Emitter Cutoff Current (NTE123A Only) Base Cutoff Current NTE123A NTE159M ON Characteristics DC Current Gain NTE123A NTE159M Collector–Emitter Saturation Voltage NTE123A NTE159M Note 1. Pulse Test: Pulse Width = 25 C unless otherwise specified) ...
Page 3
... Real Part of Common–Emitter High Frequency Input Impedance (NTE123A Only) Switching Characteristics NTE123A Delay Time Rise Time Storage Time Fall Time NTE159M Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time Note 1. Pulse Test: Pulse Width Note 2. f ...
Page 4
Max .500 (12.7) Min Emitter 45 .041 (1.05) .230 (5.84) Dia Max .195 (4.95) Dia Max .030 (.762) Max .018 (0.45) Base Collector ...