NTE378 NTE Electronics, Inc., NTE378 Datasheet
NTE378
Manufacturer Part Number
NTE378
Description
Transistor; PNP; 80 V; 5 V; 10 A; 50 W; 2.5 degC/W; 10 muA (Max.); 40; 1 V (Max
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driverr
Datasheet
1.NTE377.pdf
(2 pages)
Specifications of NTE378
Current, Collector
10 A
Current, Collector Cutoff
10 μA (Max.)
Current, Gain
40
Frequency
40 MHz
Gain, Dc Current, Minimum
40
Package Type
TO-220
Polarity
PNP
Power Dissipation
50 W
Primary Type
Si
Resistance, Thermal, Junction To Case
2.5 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Transistor Type
PNP
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1 V (Max.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for general purpose power amplification and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Features:
D Low Collector–Emitter Saturation Voltage: V
D Fast Switching Speeds
D Complementary Pairs Simplifies Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation, P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Width
Continuous
Peak (Note 1)
T
T
A
C
= +25 C
= +25 C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6ms, Duty Cycle
Silicon Complementary Transistors
EB
Power Amp Driver, Output, Switch
D
NTE377 (NPN) & NTE378 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
50%.
JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE(sat)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1V Max @ 8A
L
. . . . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
2.5 C/W
75 C/W
+275 C
1.67W
50W
80V
10A
20A
5V
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NTE378 Summary of contents
Page 1
... Power Amp Driver, Output, Switch Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack- age designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. ...
Page 2
... Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Collector Capacitance NTE377 NTE378 Gain Bandwidth Product NTE377 NTE378 Switching Times Delay and Rise Time NTE377 NTE378 Storage Time Fall Time NTE377 NTE378 = +25 C unless otherwise specified) C Symbol Test Conditions 80V CES EBO ...