BYV27-100-TR Siliconix / Vishay, BYV27-100-TR Datasheet

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BYV27-100-TR

Manufacturer Part Number
BYV27-100-TR
Description
Diode, Ultra Fast, 2A, 100V, SOD-57
Manufacturer
Siliconix / Vishay
Datasheet
1.BYV27-100-TR.pdf (3 pages)

Specifications of BYV27-100-TR

Current, Forward
2 A
Current, Reverse
150 μA
Current, Surge
50 A
Package Type
SOD-57
Primary Type
Avalanche
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+175 °C
Temperature, Operating
-55 to +175 °C
Time, Recovery
25 ns
Voltage, Forward
1.07 V
Voltage, Reverse
150 V
Lead Free Status / Rohs Status
RoHS Compliant part

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BYV27-100-TR
Manufacturer:
Vishay Semiconductors
Quantity:
10 334
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BYV27-100-TR
Manufacturer:
VISHAY/威世
Quantity:
20 000
Ultra Fast Avalanche Sinterglass Diode
Features
Applications
Very fast rectification diode e.g. for switch mode
power supply
Mechanical Data
Case: SOD-57 Sintered glass case
Parts Table
Absolute Maximum Ratings
T
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
BYV27-50
BYV27-100
BYV27-150
BYV27-200
Peak reverse voltage, non
repetitive
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Repetitive peak forward current
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
Part
see electrical characteristics
see electrical characteristics
t
p
= 10 ms, half sinewave
Test condition
V
V
V
V
R
R
R
R
= 50 V; I
= 100 V; I
= 150 V; I
= 200 V; I
FAV
Type differentiation
FAV
FAV
FAV
e2
= 2 A
= 2 A
= 2 A
= 2 A
Terminals: Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
BYV27-100
BYV27-150
BYV27-200
BYV27-100
BYV27-150
BYV27-200
BYV27-50
BYV27-50
Part
V
V
V
V
R
R
R
R
Symbol
V
V
V
V
I
I
= V
= V
= V
= V
FSM
FRM
SOD-57
SOD-57
SOD-57
SOD-57
RSM
RSM
RSM
RSM
RRM
RRM
RRM
RRM
Vishay Semiconductors
Value
110
165
220
100
150
200
55
50
50
15
Package
BYV27/...
Unit
V
V
V
V
V
V
V
V
A
A
1

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BYV27-100-TR Summary of contents

Page 1

... Weight: approx. 369 mg Type differentiation FAV V = 100 FAV V = 150 FAV V = 200 FAV Test condition Part BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27/... Vishay Semiconductors Package SOD-57 SOD-57 SOD-57 SOD-57 Symbol Value Unit RSM V 110 V RSM V 165 V RSM V 220 V RSM ...

Page 2

... BYV27/... Vishay Semiconductors Parameter Average forward current Pulse energy in avalanche I (BR)R mode, non repetitive (inductive load switch off) Junction and storage temperature range Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient mm board with spacing 25 mm Electrical Characteristics °C, unless otherwise specified ...

Page 3

... RRM 16385 Figure 5. Max. Reverse Power Dissipation vs. Junction 100 175 0.1 16386 Figure 6. Diode Capacitance vs. Reverse Voltage 3.6 (0.140)max. 26(1.014) min. 4.0 (0.156) max. BYV27/... Vishay Semiconductors RRM P –Limit R @100 % –Limit R @ 100 125 150 175 T – Junction Temperature ( ° Temperature MHz 1 ...

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