BYV27-100-TR Siliconix / Vishay, BYV27-100-TR Datasheet - Page 3

• Manufacturer Part Number: BYV27-100-TR
• Description: Diode, Ultra Fast, 2A, 100V, SOD-57
• Manufacturer: Siliconix / Vishay

Specifications of BYV27-100-TR

• Current, Forward: 2 A
• Current, Reverse: 150 μA
• Current, Surge: 50 A
• Package Type: SOD-57
• Primary Type: Avalanche
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -55 to +175 °C
• Time, Recovery: 25 ns
• Voltage, Forward: 1.07 V
• Voltage, Reverse: 150 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Figure 3. Max. Average Forward Current vs. Ambient Temperature
Package Dimensions in mm (Inches)
16383
16384
1000
100
Figure 4. Reverse Current vs. Junction Temperature
2.5
2.0
1.5
1.0
0.5
0.0
10
Sintered Glass Case
SOD-57
1
25
0
R
PCB: d = 25 mm
thJA
20 40 60 80 100 120 140 160 180
V
R
50
T
= V
= 100 K/W
amb
T
j
26(1.014) min.
– Junction Temperature ( °C )
RRM
– Ambient Temperature (°C )
75
100
R
125
half sinewave
thJA
V
R
Cathode Identification
l = 10 mm
= V
= 45 K/W
150
RRM
175
4.0 (0.156) max.
3.6 (0.140)max.
16385
16386
Figure 5. Max. Reverse Power Dissipation vs. Junction
100
70
60
50
40
30
20
10
80
60
40
20
26(1.014) min.
Figure 6. Diode Capacitance vs. Reverse Voltage
0
0
0.1
25
ISO Method E
50
T
j
V
– Junction Temperature ( °C )
R
1.0
75
– Reverse Voltage ( V )
0.82 (0.032) max.
Temperature
@80 % V
100
Vishay Semiconductors
P
R
–Limit
94 9538
@100 % V
10.0
125
R
P
V
R
–Limit
R
f = 1 MHz
= V
150
RRM
BYV27/...
R
100.0
175
3