NTE2501 NTE Electronics, Inc., NTE2501 Datasheet - Page 2

• Manufacturer Part Number: NTE2501
• Description: Transistor, NPN; TO-126M; NPN; 300 V; 300 V; 5 V; 100 mA; 1.5 W (Collector)
• Manufacturer: NTE Electronics, Inc.
• Type: High Voltager

Specifications of NTE2501

• Current, Collector: 100 mA
• Current, Gain: 100 to 200
• Device Dissipation: 1.5 W
• Frequency: 70 MHz
• Gain, Dc Current, Maximum: 200
• Gain, Dc Current, Minimum: 100
• Package Type: TO-126ML
• Polarity: NPN
• Power Dissipation: 1.5 W
• Primary Type: Si
• Temperature, Junction, Operating: 0 to +150 °C
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Base: 300 V
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Breakdown, Emitter To Base: 5 V
• Voltage, Collector To Base: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Collector To Emitter, Saturation: 600 mV
• Voltage, Emitter To Base: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Output Capacitance
Reverse Transfer Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
NTE2502
NTE2502
NTE2501
NTE2501
Parameter
.118 (3.0)
Dia
(7.5)
.295
V
V
V
Symbol
E
V
V
(BR)CBO
(BR)CEO
(BR)EBO
.315 (8.0)
CE(sat)
BE(sat)
C
C
A
ob
re
C
= +25 C unless otherwise specified)
B
V
V
I
I
I
I
I
C
C
C
C
E
CB
CB
= 10 A, I
= 20mA, I
= 20mA, I
= 10 A, I
= 1mA, R
= 30V, f = 1MHz
= 30V, f = 1MHz
Test Conditions
.094 (2.4)
(15.5)
(11.0)
.610
.433
E
C
BE
B
B
= 0
= 0
= 2mA
= 2mA
=
.130
(3.3)
Min
300
300
–
–
–
–
–
–
5
Typ
2.6
3.1
1.8
2.3
–
–
–
–
–
Max Unit
600
1.0
–
–
–
–
–
–
–
mV
pF
pF
pF
pF
V
V
V
V