NTE245 NTE Electronics, Inc., NTE245 Datasheet
NTE245
Manufacturer Part Number
NTE245
Description
Transistor; TO3; NPN; 80; 80 V; 5 V; 10 A; 150 W; -55 to 200 degC; 1.17 degC/W
Manufacturer
NTE Electronics, Inc.
Type
Amplifierr
Datasheet
1.NTE245.pdf
(2 pages)
Specifications of NTE245
Current, Continuous Collector
10 A
Current, Gain
1000
Current, Input
200 mA
Current, Output
10 A
Device Dissipation
150 W
Gain, Dc Current, Minimum
1000
Package Type
TO-3
Polarity
NPN
Power Dissipation
150 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.17 °C⁄W
Temperature Range, Junction, Operating
-55 to +200 °C
Transistor Polarity
NPN
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
80 V
Description:
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: h
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE245 (NPN) & NTE246 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
C
= 4000 Typ @ I
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
CEO(sus)
I
I
I
CEO
CER
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
C
J
thJC
CE
EB
EB
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 80V, R
= 80V, R
= 5V, I
= 40V, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5A
C
Test Conditions
B
= 0
BE
BE
B
= 0
= 0, Note 1
= 1k
= 1k , T
C
= +150 C
Min
80
–
–
–
–
Typ
–55 to +200 C
–55 to +200 C
–
–
–
–
–
0.857W/ C
Max Unit
1.0
1.0
5.0
2.0
1.17 C/W
–
200mA
150W
mA
mA
mA
mA
80V
80V
10A
V
5V
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NTE245 Summary of contents
Page 1
... NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector– ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Voltage Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% NTE245 B NTE246 B = +25 C unless otherwise specified) A Symbol Test Conditions 3V 5A 20mA CE(sat 10A 50mA 3V .135 (3.45) Max ...