NTE108 NTE Electronics, Inc., NTE108 Datasheet
NTE108
Manufacturer Part Number
NTE108
Description
Transistor; TO-92; NPN; 15; 30; 3 V; 50 mA; 625 mW; -55 to 150 degC; 200 degC/
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, High Frequencyr
Datasheet
1.NTE108.pdf
(2 pages)
Specifications of NTE108
Current, Collector
50 mA
Current, Collector Cutoff
10 nA
Current, Continuous Collector
50 mA
Current, Gain
200
Device Dissipation
625 mW
Frequency
600 MHz
Gain, Dc Current, Maximum
200
Gain, Dc Current, Minimum
20 mA
Package Type
TO-92
Polarity
NPN
Power Dissipation
625 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
200 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
30 V
Voltage, Breakdown, Collector To Emitter
15 V
Voltage, Breakdown, Emitter To Base
3 V
Voltage, Collector To Base
30 V
Voltage, Collector To Emitter
15 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
3 V
Description:
The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise,
high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating
circuits with rise and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient (Note 1), R
Note 1. R
Electrical Characteristics: (T
Note 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1%.
OFF Characteristics
Collector−Emitter Breakdown Voltage V
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Derate Above 25°C
ΘJA
Parameter
is measured with the device soldered into a typical printed circuit board.
EBO
CBO
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Frequency Amplifier
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE108 and NTE108−1
Silicon NPN Transistor
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
I
CBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
C
C
E
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10µA, I
= 3mA, I
= 1µA, I
= 15V, I
Test Conditions
thJA
E
B
C
= 0
E
= 0, Note 2
= 0
= 0
. . . . . . . . . . . . . . . . . . . . . . . . .
Min Typ Max Unit
15
30
3
−
−55° to +150°C
−55° to +150°C
−
−
−
−
+83.3°C/W
+200°C/W
10
12mW/°C
−
−
−
625mW
50mA
nA
15V
30V
V
V
V
3V
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NTE108 Summary of contents
Page 1
... Description: The NTE108 (TO92) and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating circuits with rise and fall times less than 2.5ns. Absolute Maximum Ratings: Collector−Emitter Voltage, V Collector− ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Small−Signal Characteristics Current Gain−Bandwidth Product Output Capacitance Input Capacitance Noise Figure Functional Test Common−Emitter Amplifier Power Gain Power Output Oscillator Collector Efficiency Note 2. ...