S3J-E3/57T General Semiconductor / Vishay, S3J-E3/57T Datasheet - Page 3

• Manufacturer Part Number: S3J-E3/57T
• Description: RECTIFIER, 3A, 600V, STD SM
• Manufacturer: General Semiconductor / Vishay

Specifications of S3J-E3/57T

• Capacitance, Junction: 60 pF
• Current, Forward: 3 A
• Current, Reverse: 250 μA
• Current, Surge: 100 A
• Package Type: DO-214AB (SMC)
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 2.5 μs
• Voltage, Forward: 1.15 V
• Voltage, Reverse: 600 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 25 °C
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.079 (2.06)
0.103 (2.62)
0.9
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
1.0
60
1.1
T
DO-214AB (SMC)
T
J
J
80
= 125 °C
= 25 °C
0.305 (7.75)
0.260 (6.60)
0.320 (8.13)
0.280 (7.11)
1.2
Cathode Band
100
1.3
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.126 (3.20)
MIN.
100
100
0.1
10
10
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.1
0.320 REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.060 (1.52)
MIN.
0.185 (4.69)
10
1
MAX.
S3A thru S3M
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
100
100
3