S3J Fairchild Semiconductor, S3J Datasheet

DIODE GPP GEN PURP 3A 600V SMC

S3J

Manufacturer Part Number
S3J
Description
DIODE GPP GEN PURP 3A 600V SMC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of S3J

Voltage - Forward (vf) (max) @ If
1.2V @ 3A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2.5µs
Capacitance @ Vr, F
60pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.2 V
Recovery Time
2500 ns
Forward Continuous Current
3 A @ Ta=100C
Max Surge Current
100 A
Reverse Current Ir
5 uA
Power Dissipation
2.6 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
S3J
S3JFSTR

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2001 Fairchild Semiconductor Corporation
Symbol
Symbol
Symbol
General Purpose Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
V
I
I
T
T
V
t
I
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
P
R
Device mounted on FR-4 PCB 0.013 mm.
F(AV)
FSM
rr
R
stg
J
RRM
F
T
D
JA
Features
Low profile package.
Glass passivated junction.
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Forward Voltage @ 3.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Power Dissipation
Thermal Resistance, Junction to Ambient*
I
V
F
R
= 0.5 A, I
8.3 ms Single Half-Sine-Wave
= 4.0 V, f = 1.0 MHz
R
= 1.0 A, I
Parameter
Parameter
Parameter
rr
R
= 0.25 A
T
S3A - S3M
A
= 25°C unless otherwise noted
T
T
T
A
A
A
= 25°C unless otherwise noted
A
= 25 C
= 125 C
= 100°C
3A
3A
50
COLOR BAND DENOTES CATHODE
SMC/DO-214AB
100
3B
3B
200
3D
3D
-55 to +150
-55 to +150
Device
Value
Value
400
3G
100
3G
250
3.0
1.2
2.5
5.0
2.6
60
47
600
3J
3J
800
3K
3K
1000
3M
3M
S3A-S3M, Rev. C
Units
Units
Units
C/W
W
pF
V
A
A
V
C
C
A
A
s

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S3J Summary of contents

Page 1

... Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Parameter V Forward Voltage @ 3 Reverse Recovery Time 0 1 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation S3A - S3M SMC/DO-214AB COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100 = 100° 25°C unless otherwise noted 0. ...

Page 2

... Figure 1. Forward Current Derating Curve 120 100 8.3mm Single Half Sine-Wave 20 JEDEC Method Number of Cycles at 60Hz Figure 3. Non-Repetitive Surge Current 100 2001 Fairchild Semiconductor Corporation 100 10 1 0.1 0.01 0.6 Figure 2. Forward Voltage Characteristics 100 100 0 Figure 4. Reverse Current vs Reverse Voltage 50 º ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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