NTE67 NTE Electronics, Inc., NTE67 Datasheet
NTE67
Manufacturer Part Number
NTE67
Description
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 1Ohm; ID 4.5A; TO-220; PD 75W; VGS +/-20V; Qg 18
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE67.pdf
(3 pages)
Specifications of NTE67
Current, Drain
4.5 A
Gate Charge, Total
18 nC
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
75 W
Resistance, Drain To Source On
1 Ohm
Resistance, Thermal, Junction To Case
1.67 K⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
37 ns
Time, Turn-on Delay
11 ns
Transconductance, Forward
4.4 mhos
Transistor Type
N Channel Enhancement Mode
Voltage, Breakdown, Drain To Source
400 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±20 V
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (T
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I
Pulsed Drain Current (Note 2), I
Pulsed Gate Current, I
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), R
Note 1. Pulse Test: Pulse Width
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, V
T
T
Derate Above 25 C
C
C
= +25 C
= +100 C
DS(ON)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
dd
GM
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50V, R
GS
J
= 1M , T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C to +150 C), V
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
N–Ch, Enhancement Mode
stg
DM
G
= 25 , Starting T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
High Speed Switch
300 s, Duty Cycle
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C to +125 C), V
D
J
thJC
MOSFET
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
NTE67
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25 C.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2%.
DGR
. . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . . . . . . . . .
–55 to +150 C
–55 to +150 C
thCS
1.67K/W
0.24K/W
0.6W/ C
+300 C
290mJ
80K/W
400V
400V
4.5A
3.0A
1.5A
5.5A
75W
20V
18A
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NTE67 Summary of contents
Page 1
... Description: The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower R DS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area ...
Page 2
Electrical Characteristics: (T Parameter Drain–Source Breakdown Voltage Gate Threshold Voltage Gate–Source Leakage, Forward Gate–Source Leakage, Reverse Zero Gate Voltage Drain Current On–State Drain–Source Current Static Drain–Source On–State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time ...
Page 3
Dia Max .070 (1.78) Max Gate .100 (2.54) .420 (10.67) Max .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...