NTE55 NTE Electronics, Inc., NTE55 Datasheet
NTE55
Manufacturer Part Number
NTE55
Description
Transistor; PNP; Silicon; TO220; 150 V; 150 V; 5 V; 8 A; 2 W; -65 to 150 degC
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Driverr
Datasheet
1.NTE54.pdf
(2 pages)
Specifications of NTE55
Complement To
NPN
Current, Collector
8 A
Current, Collector Cutoff
0.1 mA
Current, Continuous Collector
8 A
Current, Gain
40
Frequency
30 MHz
Material Type
Silicon
Package Type
TO-220
Polarity
PNP
Power Dissipation
2 W
Primary Type
Si
Resistance, Thermal, Junction To Case
2.5 °C/W
Temperature Range, Junction, Operating
-65 to +150 °C
Thermal Resistance, Junction To Ambient
62.5 °C⁄W
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
150 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
0.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
D Collector–Emitter Sustaining Voltage: V
D High Current Gain–Bandwidth Product: f
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched comple-
h
Continuous
Peak
Derate Above 25 C
Derate Above 25 C
FE
mentary pairs have their gain specification (h
=
=
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40 Min @ I
20 MIn @ I
High Frequency Driver for Audio Amplifier
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB)
C
C
A
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3A
= 4A
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE54 (NPN) & NTE55 (PNP)
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
T
thJA
= 30MHz Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150V Min
FE
) matched to within 10% of each other.
C
= 500mA
–65 to +150 C
–65 to +150 C
+62.5 C/W
0.016W/ C
0.04W/ C
+2.5 C/W
150V
150V
50W
16A
2W
5V
8A
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NTE55 Summary of contents
Page 1
... Silicon Complementary Transistors High Frequency Driver for Audio Amplifier Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications. Features Current Gain Specified to 4A Min @ I FE ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain DC Current Gain Linearity Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Current Gain–Bandwidth Product Note 2. Pulse ...