NTE6404 NTE Electronics, Inc., NTE6404 Datasheet
NTE6404
Manufacturer Part Number
NTE6404
Description
Switch, Unilateral, 1.0 A
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE6404.pdf
(2 pages)
Description:
The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics
closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts
with a 0.02%/ C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain trig-
gering at lower values and to obtain transient free wave forms.
Silicon Unilateral Switches are specifically designed and characterized for use in monostable and
bistable applications where low cost is of prime importance.
Applications:
D SCR Triggers
D Frequency Dividers
D Ring Counters
D Cross Point Switching
D Over–Voltage Sensors
Absolute Maximum Ratings:
Power Dissipation (Note 1)
Peak Reverse Voltage
DC Forward Anode Current (Note 1)
DC Gate Current (Note 1, Note 2)
Peak Recurrent Forward Current (1% duty cycle, 10 s pulse width, T
Peak Non–Recurrent Forward Current (10 s pulse width, T
Operating Junction Temperature Range
Storage Temperature Range
Note 1. Derate linearly to zero at 125 C
Note 2. This rating applicable only in OFF state. Maximum gate current in conducting state limited
Electrical Characteristics: (T
Static Characteristics
Forward Switching Voltage
Forward Switching Current
Holding Current
by maximum power rating.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Unilateral Switch (SUS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= +25 C, unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
NTE6404
V
I
I
S
H
S
Test Conditions
A
= +25 C)
A
= +100 C)
. . . . . . . . . . . . . . . . . . . .
Min
7
–
–
Typ
–
–
–
. . . . . . . . . . .
–55 to +125 C
–65 to +150 C
Max
0.75
200
9
300mW
175mA
Unit
–30V
mA
5mA
V
A
1A
5A
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NTE6404 Summary of contents
Page 1
... Silicon Unilateral Switch (SUS) Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts with a 0.02%/ C temperature coefficient. A gate lead is provided to eliminate rate effect, obtain trig- gering at lower values and to obtain transient free wave forms ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Static Characteristics (Cont’d) Reverse Current Forward Current (Off–State) Forward Voltage Drop (On–State) Temperature Coefficient of Switching Voltage Dymanic Characteristics Turn–On Time Turn–Off Time Capacitance = +25 C, unless otherwise specified) A Symbol Test Conditions I ...