NTE3086 NTE Electronics, Inc., NTE3086 Datasheet
NTE3086
Manufacturer Part Number
NTE3086
Description
Optoisolater; Analog; 8-Pin DIP; Transistor; 2 Channel; 1.1 V@ 20 mA; 60 mA
Manufacturer
NTE Electronics, Inc.
Type
Analogr
Datasheet
1.NTE3086.pdf
(3 pages)
Specifications of NTE3086
Current Transfer Ratio
20
Current, Forward
60 mA
Input Type
LED
Output Type
Transistor
Package Type
8-Pin DIP
Power Dissipation
400 mW @ 25 °C
Special Features
2 Channel
Temperature, Operating, Maximum
+100 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off
25 μs (Typ.)
Time, Turn-on
5 μs (Typ.)
Voltage, Forward
1.1 V (Typ.) @ 20 mA
Voltage, Isolation
2500 V (Typ.)
Voltage, Reverse
25 V (Typ.) @ 10 μA
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo-
transistor per channel. This device is constructed with a high voltage insulation, double molded pack-
aging process which offers 7.5KV withstand test capability.
Features:
D Two isolated Channels per Package
D 7500V Withstand Test Voltage
D CTR Minimum: 20%
Absolute Maximum Ratings:
Gallium Arsenide LED (Each Channel)
Power Dissipation (T
Forward Current, I
Phototransistor (Each Channel)
Power Dissipation (T
Collector–Emitter Breakdow Voltage, V
Collector–Base Breakdow Voltage, V
Emitter–Collector Breakdow Voltage, V
Total Device
Power Dissipation (T
Operating Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 10sec Max), T
Electrical Characteristics: (T
Gallium Arsenide LED
Forward Voltage
Reverse Voltage
Reverse Current
Junction Capacitance
Derate Above 25 C
Continuous
Peak (Pulse Width 1 s, 300pps)
Derate Above 25 C
Derate Above 25 C
Parameter
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
A
A
= +25 C), P
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Dual NPN Transistor Output
stg
A
= +25 C unless otherwise specified)
opr
D
D
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
(BR)CEO
(BR)ECO
V
V
Optoisolator
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
R
F
NTE3086
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
V
V = 0, f = 1MHz
F
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
R
= 20mA
= 10 A
= 3V
L
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
–
3
–
–
Typ
1.1
25
80
–55 to +100 C
–55 to +150 C
–
5.33mW/ C
Max
1.3mW/ C
2.0mW/ C
1.5
10
–
–
100mW
150mW
400mW
+250 C
60mA
Unit
pF
30V
80V
V
V
A
3A
6V
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NTE3086 Summary of contents
Page 1
... Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo- transistor per channel. This device is constructed with a high voltage insulation, double molded pack- aging process which offers 7.5KV withstand test capability. Features: D Two isolated Channels per Package ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Phototransistor Detector Collector–Emitter Breakdown Voltage Emitter–Collector Breakdown Voltage Collector–Base Breakdown Voltage Collector–Emitter Leakage Current Collector–Emitter Capacitance Coupled Electrical Characteristics Collector–Emitter Saturation Voltage DC Current Transfer Ratio Isolation Voltage Isolation Resistance Input to Output Capacitance Bandwidth ...
Page 3
Max Seating Plane .100 (2.54) 5 .250 (6.35) 4 .185 (4.7) Max .115 (2.94) Min ...