NTE386 NTE Electronics, Inc., NTE386 Datasheet
NTE386
Manufacturer Part Number
NTE386
Description
Transistor; NPN; 800 V; 6 V; 20 A; 10; 175 W; 0.25 mA (Max.); 10; 60; TO-3
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE386.pdf
(2 pages)
Specifications of NTE386
Current, Base
10
Current, Collector
20 A
Current, Collector Cutoff
0.25 mA (Max.)
Current, Gain
10 to 60
Gain, Dc Current, Maximum
60
Gain, Dc Current, Minimum
10
Package Type
TO-3
Polarity
NPN
Power Dissipation
175 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
500 V
Voltage, Collector To Emitter
500 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
6 V
Voltage, Saturation, Collector To Emitter
1.8 to 5.0 V
Description:
The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high–
speed power switching in inductive circuit where fall time is critical. This device is particularly suited
for line operated switchmode applications.
Applications:
D Switching Regulators
D Inverters
D Solenoid and Relay Drivers
D Motor Controls
D Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Derate Above 25 C
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100 C), P
= +25 C), P
CEO(sus)
CEV
Audio Power Amp, Switch
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE386
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
L
. . . . . . . . . . . . . .
–65 to +200 C
–65 to +200 C
1.0W/ C
1.0 C/W
+275 C
100W
175W
500V
800V
20A
30A
10A
30A
6V
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NTE386 Summary of contents
Page 1
... Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Output Capacitance Switching Characteristics (Resistive Load) Dealy Time Rise Time ...