IRF830APBF Vishay PCS, IRF830APBF Datasheet
IRF830APBF
Specifications of IRF830APBF
Available stocks
Related parts for IRF830APBF
IRF830APBF Summary of contents
Page 1
... Peak Diode Recovery dv/dt T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torqe, 6- screw Typical SMPS Topologies: Two transistor Forward Half Bridge and Full Bridge IRF830APbF SMPS MOSFET HEXFET V Rds(on) max DSS 500V @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf• ...
Page 2
... IRF830APbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
Page 3
... IRF830APbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH TO-220AB Part Marking Information ...