IRF830APBF Vishay PCS, IRF830APBF Datasheet - Page 2

• Manufacturer Part Number: IRF830APBF
• Description: MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 1.4 Ohms; ID 5A; TO-220AB; PD 74W; VGS +/-30V
• Manufacturer: Vishay PCS

Specifications of IRF830APBF

• Current, Drain: 5 A
• Gate Charge, Total: 24 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 74 W
• Resistance, Drain To Source On: 1.4 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 2.8 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Diode Characteristics
IRF830APbF
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
R
E
I
E
R
R
R
V
∆V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
θJC
θCS
θJA
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
2.8
Min. Typ. Max. Units
–––
–––
–––
–––
––– 1.62
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.60
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
620
886
–––
–––
–––
430
4.3
10
21
21
15
93
27
39
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
650
1.4
4.5
6.3
1.5
2.4
25
24
11
5.0
20
µA
nA
nC
ns
µC
pF
ns
V
Ω
V
S
A
V
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V/°C
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
= 5.0A
= 5.0A
= 25°C, I
= 25°C, I
= 49Ω,See Fig. 10
= 14Ω
= V
= 500V, V
= 400V, V
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, See Fig. 6 and 13
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
Reference to 25°C, I
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 5.0A, V
= 5.0A
= 250µA
= 3.0A
= 3.0A
GS
GS
= 0V to 400V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
230
–––
5.0
7.4
1.7
62
= 0V, T
= 0V
GS
J
G
= 0V
= 125°C
D
= 1mA
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)
2