NTE171 NTE Electronics, Inc., NTE171 Datasheet
NTE171
Manufacturer Part Number
NTE171
Description
Transistor; TO-202; NPN; 300 V; 300 V; 5 V; 100 mA; 1.67 W; -55 to 150 degC; 30
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, High Voltager
Datasheet
1.NTE171.pdf
(2 pages)
Specifications of NTE171
Current, Collector
100 mA
Current, Collector Cutoff
10 μA
Current, Continuous Collector
100 mA
Current, Gain
30 to 150
Device Dissipation
1.67 W
Frequency
50 MHz
Gain, Dc Current, Maximum
90
Gain, Dc Current, Minimum
30
Package Type
TO-202
Polarity
NPN
Power Dissipation
1.67 W
Primary Type
Si
Resistance, Thermal, Junction To Case
20 °C/W
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
75 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Collector To Base
300 V
Voltage, Collector To Emitter
300 V
Voltage, Emitter To Base
5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high−voltage TV video and
chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.
Features:
D High Collector−Emitter Breakdown Voltage Voltage: V
D Low Collector−Base Capacitance: C
Absolute Maximum Ratings:
Collector−Emitter Voltage (I
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction to Ambient, R
Thermal Resistance, Junction to Case, R
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Continuous
Peak
Derate Above 25°C
Derate Above 25°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
A
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25°C), P
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1mA, R
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
Audio/Video Amplifier
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BE
D
D
cb
ΘJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10kΩ, Note 1), V
J
= 3pF Max @ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE171
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ΘJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CER
CB
CER
= 20V
L
. . . . . . . . . . . . . . . . . . . . . . . .
= 300V @ I
. . . . . . . . . . . . . . . . . . . . .
C
= 1mA
−55° to +150°C
−55° to +150°C
13.3mW/°C
50mW/°C
75°C/W
20°C/W
+260°C
100mA
700mA
250mA
1.67W
6.25W
300V
300V
5V
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NTE171 Summary of contents
Page 1
... Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high−voltage TV video and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators. Features: D High Collector−Emitter Breakdown Voltage Voltage Low Collector−Base Capacitance: C Absolute Maximum Ratings: Collector− ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector−Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Dynamic Characteristics Current Gain−Bandwidth Product Collector−Base Capacitance Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ ...