NTE392 NTE Electronics, Inc., NTE392 Datasheet
NTE392
Manufacturer Part Number
NTE392
Description
Transistor, NPN; TO-218; NPN; 100 V; 100 V; 5 V; 25 A; 125 W; -65 to 150 degC;
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE392.pdf
(2 pages)
Specifications of NTE392
Current, Collector
25 A
Current, Gain
75
Device Dissipation
125 W
Frequency
3 MHz
Gain, Dc Current, Maximum
75
Gain, Dc Current, Minimum
15
Package Type
TO-218
Polarity
NPN
Power Dissipation
125 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Temperature, Junction, Operating
-65 to 150 °C
Thermal Resistance, Junction To Ambient
35.7 °C⁄W
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
5 V
Description:
The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: h
D High Current Gain Bandwidth Product: h
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Unclamped Inductive Load, E
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle ≤ 10%.
Continuous
Peak (Note 1)
Derate Above 25°C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
FE
CB
C
NTE392 (NPN) & NTE393 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
= 40 Typ @ 15A
= +25°C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SB
stg
= 1mA @ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fe
thJA
= 3 Min @ I
= 60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 1A, f = 1MHz
−65° to +150°C
−65° to +150°C
35.7°C/W
1.0°C/W
1W/°C
125W
90mJ
100V
100V
25A
40A
5V
5A
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NTE392 Summary of contents
Page 1
... NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current Excellent DC Gain: h ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector−Emitter Sustaining Voltage V Collector−Emitter Cutoff Current Emitter−Base Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector−Emitter Saturation Voltage Base−Emitter ON Voltage Dynamic Characteristics Small−Signal Current Gain Current−Gain Bandwidth Product Note 2. Pulse ...