NTE6409 NTE Electronics, Inc., NTE6409 Datasheet
NTE6409
Manufacturer Part Number
NTE6409
Description
UJT; Unijunction; 300 mW (Max.); 2 A (Max.); 10 mA (Typ.); TO-18; -65 degC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE6409.pdf
(2 pages)
Specifications of NTE6409
Application
Designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits
Current, Peak
2 μA
Current, Valley
10 mA
Device Dissipation
300 mW
Package Type
TO-18
Power Dissipation
300 mW
Resistance, Interbase
9.1 kohm
Temperature, Operating, Maximum
+125 °C
Temperature, Operating, Minimum
-65 °C
Transistor Type
Unijunction
Voltage, Reverse
30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 2 A Max
D Low Emitter Reverse Current: 200nA Max
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (T
Power Dissipation (Note 1), P
RMS Emitter Current, I
Peak Pulse Emitter Current (Note 2), i
Emitter Reverse Voltage, V
Interbase Voltage, V
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. Derate 3mW/ C increase in ambient temperature. The total power dissipation (available
Note 2. Capacitor discharge: 10 F or less, 30V or less
power to Emitter and Base–Two) must be limited by the external circuitry.
B2B1
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B2E
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Unijunction Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, unless otherwise specified)
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
NTE6409
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65 to +125 C
–65 to +150 C
300mW
50mA
30V
35V
2A
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NTE6409 Summary of contents
Page 1
... Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (T Power Dissipation (Note 1), P RMS Emitter Current, I ...
Page 2
Electrical Characteristics: (T Parameter Intrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Emitter Saturation Voltage Modulated Interbase Current I Emitter Reverse Current Peak Point Emitter Current Valley Point Current Base–One Peak Pulse Voltage Note 3. Intrinsic Standoff Ratio, , ...