NTE94 NTE Electronics, Inc., NTE94 Datasheet
NTE94
Manufacturer Part Number
NTE94
Description
Transistor; NPN; 300 V; 300 V; 5 V; 5 A; 2 A; 100 W; 0.75 degC/W; 300 V (Min.)
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Switchr
Datasheet
1.NTE94.pdf
(2 pages)
Specifications of NTE94
Current, Base
2 A
Current, Collector
5 A
Current, Collector Cutoff
0.25 mA
Current, Gain
90
Frequency
2.5 MHz
Gain, Dc Current, Minimum
10
Package Type
TO-3
Polarity
NPN
Power Dissipation
100 W
Primary Type
Si
Resistance, Thermal, Junction To Case
0.75 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-65 °C
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Collector To Base
300 V
Voltage, Collector To Emitter
300 V
Voltage, Collector To Emitter, Saturation
0.8 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
0.8 V (Max.)
Voltage, Sustaining, Collector To Emitter
300 V (Min.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters,
converters, regulators, and switching circuits.
Features:
D High Collector–Emitter Voltage: V
D DC Current Gain Specified at 1A and 2.5A
D Low Collector–Emitter Saturation Voltage: V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Continuous
Peak
Derate Above 75 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +75 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon NPN Transistor
High Voltage Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
D
= 300V
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE94
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE(sat)
= 0.8V @ 1A
–65 to +150 C
–65 to +200 C
1.33W/ C
0.75 C/W
100W
300V
300V
10A
5V
5A
2A
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NTE94 Summary of contents
Page 1
... Description: The NTE94 is a silicon NPN transistor in a TO3 type case designed for medium to high voltage inverters, converters, regulators, and switching circuits. Features: D High Collector–Emitter Voltage Current Gain Specified at 1A and 2.5A D Low Collector–Emitter Saturation Voltage: V Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current Gain–Bandwidth Product .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 ...