SI4435BDY-T1-E3 Siliconix / Vishay, SI4435BDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4435BDY-T1-E3
• Description: MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -7A; SO-8; PD 1.5W; VGS +/-20V; -55
• Manufacturer: Siliconix / Vishay

Specifications of SI4435BDY-T1-E3

• Channel Type: P
• Current, Drain: –6.9 A
• Gate Charge, Total: 70 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 1.5 W
• Resistance, Drain To Source On: 0.035 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 110 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 24 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: –30 V
• Voltage, Forward, Diode: -0.8 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Si4435BDY
Vishay Siliconix
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
b
0
0
Parameter
a
a
1
V
DS
a
V
Output Characteristics
5 V
GS
− Drain-to-Source Voltage (V)
= 10 thru 6 V
a
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
4 V
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
)
4
3 V
V
5
DS
I
V
D
DS
^ −1 A, V
= −15 V, V
I
F
= −30 V, V
V
V
V
V
V
V
V
V
= −2.1 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
DS
S
DS
DD
DD
Test Condition
DS
= −2.1 A, V
= V
= −5 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −30 V, V
= −15 V, R
= −15 V, R
= 0 V, V
GEN
GS
GS
GS
, I
= −10 V, I
= −10 V, R
D
= 0 V, T
GS
GS
D
= −250 mA
D
D
GS
GS
L
L
= −9.1 A
= −9.1 A
= −6.9 A
= "20 V
= −10 V
= 15 W
= 15 W
= 0 V
= 0 V
J
D
50
40
30
20
10
G
= 55_C
0
= −9.1 A
0.0
= 6 W
0.5
1.0
V
GS
Transfer Characteristics
Min
−40
−1
− Gate-to-Source Voltage (V)
1.5
2.0
0.015
0.025
Typ
−0.8
110
5.8
8.6
24
33
10
15
70
60
2.5
T
25_C
3.0
C
= −55_C
"100
Max
0.020
0.035
−1.2
−25
170
110
−3
−1
70
15
25
90
3.5
125_C
4.0
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
4.5