NTE451 NTE Electronics, Inc., NTE451 Datasheet
NTE451
Manufacturer Part Number
NTE451
Description
Transistor; N-Channel; 25 V; -25 V (Min.); -1 nA (Max.); 350 mW; 3000 uhmo
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE451.pdf
(2 pages)
Specifications of NTE451
Capacitance, Input
5 pF
Capacitance, Reverse Recovery
1 pF
Channel Type
N-Channel
Current, Drain
30 mA
Current, Gate Reverse
–1 nA
Package Type
TO-226AA (TO-92)
Polarization
N-Channel
Power Dissipation
350 mW
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–65 °C
Transconductance, Forward
3000 umhos
Transistor Type
N-Channel
Voltage, Breakdown, Gate To Source
–25 V
Voltage, Drain To Gate
25 V
Voltage, Drain To Source
25 V
Voltage, Gate To Source, Breakdown
–25 V
Voltage, Gate To Source, Cut-off
–4 V
Absolute Maximum Ratings:
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Drain Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
ON Characteristics
Zero–Gate–Voltage Drain Current
Small Signal Characteristics Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Output Conductance
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Derate Above 25 C
Parameter
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DG
Silicon N–Channel JFET Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
stg
A
= +25 C unless otherwise specified)
GSR
V
Symbol
V
Re(y
Re(y
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
C
GS(off)
I
|y
C
C
|y
VHF/UHF Amplifier
GSS
DSS
g
oss
os
rss
iss
fs
fs
os
|
is
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
)
)
D
J
I
V
V
I
V
V
V
V
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
D
NTE451
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= –1 A, V
= 10nA, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= 15V, V
= –20V, V
= –20V, V
Test Conditions
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
= 15V
= 0
= 0
= 0, f = 1kHz
= 0, f = 400MHz
= 0, f = 1kHz
= 0, f = 400MHz
= 0, f = 400MHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
= 0
= 0, T
A
= +100 C
3500
3000
–0.5
Min
–25
–
–
4
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–65 to +150 C
–65 to +150 C
7000
1000
Max
–1.0
–0.2
–4.0
100
20
60
–
–
5
1
2
2.8mW/ C
350mW
30mA
Unit
mA
mho
mho
mho
mho
mho
nA
nA
pF
pF
pF
V
V
25V
25V
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NTE451 Summary of contents
Page 1
... Gate–Source Cutoff Voltage ON Characteristics Zero–Gate–Voltage Drain Current Small Signal Characteristics Characteristics Forward Transfer Admittance Input Admittance Output Admittance Output Conductance Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance NTE451 VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GSR = +25 C stg = +25 C unless otherwise specified) ...
Page 2
Electrical Characteristics Cont’d): (T Parameter Functional Characteristics Noise Figure Common Source Power Gain .105 (2.67) Max .205 (5.2) Max = +25 C unless otherwise specified) A Symbol Test Conditions 15V 4mA ...