SI2308BDS-T1-E3 Siliconix / Vishay, SI2308BDS-T1-E3 Datasheet
SI2308BDS-T1-E3
Specifications of SI2308BDS-T1-E3
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SI2308BDS-T1-E3 Summary of contents
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... V (V) R (Ω) DS DS(on) 0.156 0.192 4 Ordering Information: Si2308BDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si2308BDS Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 69958 S-83053-Rev. B, 29-Dec-08 New Product 300 240 180 120 2.0 1.7 1 1.1 0.8 0 Si2308BDS Vishay Siliconix ° 125 ° ° 0.0 0.7 1.4 2.1 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...
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... Si2308BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.4 2 250 µA D 1.8 1.5 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.35 0.30 0. °C J 0.20 0.15 0.10 0.8 1 ...
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... T - Case Temperature (°C) C Current Derating* 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si2308BDS Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...
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... Si2308BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...